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IRF7342D2PBF
Infineon Technologies
Product No:
IRF7342D2PBF
Manufacturer:
Package:
8-SO
Batch:
-
Datasheet:
Description:
MOSFET P-CH 55V 3.4A 8SO
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
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IRF7342D2PBF - Product Information
Parameter Info
User Guide
| Mfr | Infineon Technologies |
| Series | FETKY™ |
| Package | Tube |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
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