Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSC119N03MSCG

Infineon Technologies

Product No:

BSC119N03MSCG

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 160000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1094

    $0.2565

    $280.611

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

BSC119N03MSCG - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™3
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11.9mOhm @ 30A, 10V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Supplier Device Package PG-TDSON-8
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 39A (Tc)