Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSC200P03LSG

Infineon Technologies

Product No:

BSC200P03LSG

Manufacturer:

Package:

PG-TDSON-8-6

Batch:

Datasheet:

Description:

P-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Infineon Technologies
Series	OptiMOS®
Package	Bulk
FET Type	P-Channel
Vgs (Max)	±25V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 100µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	20mOhm @ 12.5A, 10V
Power Dissipation (Max)	2.5W (Ta), 63W (Tc)
Supplier Device Package	PG-TDSON-8-6
Gate Charge (Qg) (Max) @ Vgs	48.5 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	2430 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	9.9A (Ta), 12.5A (Tc)