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IRF6720S2TRPBF

Infineon Technologies

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IRF6720S2TRPBF

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DirectFET™ Isometric S1

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Description:

MOSFET N-CH 30V 11A DIRECTFET

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Mfr	Infineon Technologies
Series	HEXFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric S1
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.35V @ 25µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	8mOhm @ 11A, 10V
Power Dissipation (Max)	1.7W (Ta), 17W (Tc)
Supplier Device Package	DirectFET™ Isometric S1
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1140 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 35A (Tc)