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IRF6629TR1PBF

Infineon Technologies

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IRF6629TR1PBF

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DIRECTFET™ MX

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Description:

MOSFET N-CH 25V 29A DIRECTFET

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Mfr	Infineon Technologies
Series	HEXFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MX
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.35V @ 100µA
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	2.1mOhm @ 29A, 10V
Power Dissipation (Max)	2.8W (Ta), 100W (Tc)
Supplier Device Package	DIRECTFET™ MX
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 4.5 V
Drain to Source Voltage (Vdss)	25 V
Input Capacitance (Ciss) (Max) @ Vds	4260 pF @ 13 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 180A (Tc)