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IPP80CN10NGXKSA1

Infineon Technologies

Product No:

IPP80CN10NGXKSA1

Manufacturer:

Package:

PG-TO220-3-123

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Datasheet:

Description:

PFET, 13A I(D), 100V, 0.08OHM, 1

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Mfr	Infineon Technologies
Series	OptiMOS™ 2
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 12µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	80mOhm @ 13A, 10V
Power Dissipation (Max)	31W (Tc)
Supplier Device Package	PG-TO220-3-123
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	716 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)