Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPN80R600P7ATMA1

Infineon Technologies

Product No:

IPN80R600P7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 800V 8A SOT223

Quantity:

Delivery:

Payment:

In Stock : 2975

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.6625

    $1.6625

  • 10

    $1.3775

    $13.775

  • 100

    $1.096395

    $109.6395

  • 500

    $0.927732

    $463.866

  • 1000

    $0.78717

    $787.17

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

IPN80R600P7ATMA1 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 170µA
Base Product Number IPN80R600
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 600mOhm @ 3.4A, 10V
Power Dissipation (Max) 7.4W (Tc)
Supplier Device Package PG-SOT223
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Drain to Source Voltage (Vdss) 800 V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 500 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)