Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPN60R2K1CE

Infineon Technologies

Product No:

IPN60R2K1CE

Manufacturer:

Package:

PG-SOT223-3-1

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-261-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 60µA
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	2.1Ohm @ 800mA, 10V
Power Dissipation (Max)	5W (Tc)
Supplier Device Package	PG-SOT223-3-1
Gate Charge (Qg) (Max) @ Vgs	6.7 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3.7A (Tc)