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IPI60R099CPAAKSA1

Infineon Technologies

Product No:

IPI60R099CPAAKSA1

Manufacturer:

Package:

PG-TO262-3

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Datasheet:

Description:

MOSFET N-CH 600V 31A TO262-3

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Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 1.2mA
Base Product Number	IPI60R099
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	105mOhm @ 18A, 10V
Power Dissipation (Max)	255W (Tc)
Supplier Device Package	PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)