Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPI600N25N3G

Infineon Technologies

Product No:

IPI600N25N3G

Manufacturer:

Package:

PG-TO262-3-1

Batch:

Datasheet:

Description:

IPI600N25 - 12V-300V N-CHANNEL P

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 90µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
Power Dissipation (Max)	136W (Tc)
Supplier Device Package	PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Drain to Source Voltage (Vdss)	250 V
Input Capacitance (Ciss) (Max) @ Vds	2350 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)