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IPD60R600E6BTMA1

Infineon Technologies

Product No:

IPD60R600E6BTMA1

Manufacturer:

Package:

PG-TO252-3-313

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Mfr	Infineon Technologies
Series	CoolMOS™ E6
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 200µA
Base Product Number	IPD60R
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	600mOhm @ 2.4A, 10V
Power Dissipation (Max)	63W (Tc)
Supplier Device Package	PG-TO252-3-313
Gate Charge (Qg) (Max) @ Vgs	20.5 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	7.3A (Tc)