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IPD30N08S222ATMA1

Infineon Technologies

Product No:

IPD30N08S222ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 75V 30A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 2000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.5105

    $1.5105

  • 10

    $1.35755

    $13.5755

  • 100

    $1.09117

    $109.117

  • 500

    $0.896477

    $448.2385

  • 1000

    $0.742805

    $742.805

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IPD30N08S222ATMA1 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 4V @ 80µA
Base Product Number IPD30N08
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 21.5mOhm @ 50A, 10V
Power Dissipation (Max) 136W (Tc)
Supplier Device Package PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Drain to Source Voltage (Vdss) 75 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)