Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD30N06S223ATMA1

Infineon Technologies

Product No:

IPD30N06S223ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 55V 30A TO252-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

IPD30N06S223ATMA1 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Discontinued at Digi-Key
Vgs(th) (Max) @ Id 4V @ 50µA
Base Product Number IPD30N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 23mOhm @ 21A, 10V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package PG-TO252-3-11
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Drain to Source Voltage (Vdss) 55 V
Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)