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IPB79CN10N G

Infineon Technologies

Product No:

IPB79CN10N G

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

Description:

MOSFET N-CH 100V 13A D2PAK

Quantity:

Delivery:

Payment:

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IPB79CN10N G - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 12µA
Base Product Number IPB79C
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 79mOhm @ 13A, 10V
Power Dissipation (Max) 31W (Tc)
Supplier Device Package PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 716 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)