Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPB093N04LG

Infineon Technologies

Product No:

IPB093N04LG

Manufacturer:

Infineon Technologies

Package:

PG-TO-263-3-2

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 17233

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 866

    $0.3325

    $287.945

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

IPB093N04LG - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 2V @ 77µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 9.3mOhm @ 50A, 10V
Power Dissipation (Max) 47W (Tc)
Supplier Device Package PG-TO-263-3-2
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)