Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPB049N08N5ATMA1

Infineon Technologies

Product No:

IPB049N08N5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 80V 80A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 1874

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.774

    $2.774

  • 10

    $2.489

    $24.89

  • 100

    $2.000605

    $200.0605

  • 500

    $1.64369

    $821.845

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

IPB049N08N5ATMA1 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 66µA
Base Product Number IPB049
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4.9mOhm @ 80A, 10V
Power Dissipation (Max) 125W (Tc)
Supplier Device Package PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 3770 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)