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IPB023N06N3GATMA1

Infineon Technologies

Product No:

IPB023N06N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Batch:

-

Datasheet:

Description:

MOSFET N-CH 60V 140A TO263-7

Quantity:

Delivery:

Payment:

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IPB023N06N3GATMA1 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 141µA
Base Product Number IPB023N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Power Dissipation (Max) 214W (Tc)
Supplier Device Package PG-TO263-7
Gate Charge (Qg) (Max) @ Vgs 198 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 140A (Tc)