Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMYH200R050M1HXKSA1

Infineon Technologies

Product No:

IMYH200R050M1HXKSA1

Manufacturer:

Package:

PG-TO247-4-U04

Batch:

Datasheet:

Description:

SIC DISCRETE

Quantity:

Delivery:

Payment:

In Stock : 128

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
FET Type	N-Channel
Vgs (Max)	+20V, -7V
Technology	SiC (Silicon Carbide Junction Transistor)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-4
Product Status	Active
Vgs(th) (Max) @ Id	5.5V @ 12.1mA
Base Product Number	IMYH200
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	64mOhm @ 20A, 18V
Power Dissipation (Max)	348W (Tc)
Supplier Device Package	PG-TO247-4-U04
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 18 V
Drain to Source Voltage (Vdss)	2000 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	48A (Tc)