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IMW120R350M1HXKSA1

Infineon Technologies

Product No:

IMW120R350M1HXKSA1

Manufacturer:

Package:

PG-TO247-3-41

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Datasheet:

Description:

SICFET N-CH 1.2KV 4.7A TO247-3

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Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
FET Type	N-Channel
Vgs (Max)	+23V, -7V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 1mA
Base Product Number	IMW120
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	455mOhm @ 2A, 18V
Power Dissipation (Max)	60W (Tc)
Supplier Device Package	PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs	5.3 nC @ 18 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	182 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)