Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BUZ30AH

Infineon Technologies

Product No:

BUZ30AH

Manufacturer:

Package:

PG-TO220-3

Batch:

Datasheet:

Description:

MOSFET N-CH 200V 21A TO220-3

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	130mOhm @ 13.5A, 10V
Power Dissipation (Max)	125W (Tc)
Supplier Device Package	PG-TO220-3
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)