Home / Single FETs, MOSFETs / BSZ110N06NS3GATMA1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSZ110N06NS3GATMA1

Infineon Technologies

Product No:

BSZ110N06NS3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 20A 8TSDSON

Quantity:

Delivery:

Payment:

In Stock : 13186

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.817

    $0.817

  • 10

    $0.73055

    $7.3055

  • 100

    $0.56962

    $56.962

  • 500

    $0.470535

    $235.2675

  • 1000

    $0.371469

    $371.469

  • 2000

    $0.346712

    $693.424

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

BSZ110N06NS3GATMA1 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 23µA
Base Product Number BSZ110
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 20A, 10V
Power Dissipation (Max) 2.1W (Ta), 50W (Tc)
Supplier Device Package PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)