Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BSS119NH7796

Infineon Technologies

Product No:

BSS119NH7796

Manufacturer:

Infineon Technologies

Package:

PG-SOT23-3-5

Batch:

-

Datasheet:

-

Description:

SMALL SIGNAL N-CHANNEL MOSFET

Quantity:

Delivery:

Payment:

In Stock : 8803

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 8803

    $0.038

    $334.514

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

BSS119NH7796 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 13µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 6Ohm @ 190mA, 10V
Power Dissipation (Max) 500mW (Ta)
Supplier Device Package PG-SOT23-3-5
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 20.9 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)