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BSP297 E6327

Infineon Technologies

Product No:

BSP297 E6327

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 200V 660MA SOT223-4

Quantity:

Delivery:

Payment:

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BSP297 E6327 - Product Information

Parameter Info

User Guide

Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Product Status Obsolete
Vgs(th) (Max) @ Id 1.8V @ 400µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V
Power Dissipation (Max) 1.8W (Ta)
Supplier Device Package PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs 16.1 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 357 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 660mA (Ta)