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RN1117MFV,L3F

Toshiba Semiconductor and Storage

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RN1117MFV,L3F

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VESM

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Description:

TRANS PREBIAS NPN 50V 0.1A VESM

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Product Status	Active
Transistor Type	NPN - Pre-Biased
Base Product Number	RN1117
Resistor - Base (R1)	10 kOhms
Frequency - Transition	250 MHz
Supplier Device Package	VESM
Resistor - Emitter Base (R2)	4.7 kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector (Ic) (Max)	100 mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50 V