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RN1101MFV,L3F

Toshiba Semiconductor and Storage

Product No:

RN1101MFV,L3F

Package:

VESM

Batch:

-

Datasheet:

Description:

TRANS PREBIAS NPN 50V 0.1A VESM

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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RN1101MFV,L3F - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Product Status Not For New Designs
Transistor Type NPN - Pre-Biased
Base Product Number RN1101
Resistor - Base (R1) 4.7 kOhms
Supplier Device Package VESM
Resistor - Emitter Base (R2) 4.7 kOhms
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50 V