Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

RN1106MFV(TL3,T)

Toshiba Semiconductor and Storage

Product No:

RN1106MFV(TL3,T)

Manufacturer:

Package:

VESM

Batch:

Datasheet:

Description:

TRANS PREBIAS NPN 50V 0.1A VESM

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Product Status	Obsolete
Transistor Type	NPN - Pre-Biased
Base Product Number	RN1106
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	VESM
Resistor - Emitter Base (R2)	47 kOhms
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector (Ic) (Max)	100 mA
Current - Collector Cutoff (Max)	500nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50 V