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Renesas Electronics America Inc
Product No:
RJS6005WDPK-00#T0
Manufacturer:
Package:
TO-3P
Batch:
-
Datasheet:
-
Description:
DIODE GEN PURP 600V 30A
Quantity:
Delivery:
Payment:
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Mfr | Renesas Electronics America Inc |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Series | - |
Package | Tube |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Product Status | Obsolete |
Diode Configuration | 1 Pair Common Cathode |
Supplier Device Package | TO-3P |
Reverse Recovery Time (trr) | 15 ns |
Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
Voltage - DC Reverse (Vr) (Max) | 600 V |
Operating Temperature - Junction | -55°C ~ 155°C |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 15 A |
Current - Average Rectified (Io) (per Diode) | 15A (DC) |