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RJS6004WDPK-00#T0

Renesas Electronics America Inc

Product No:

RJS6004WDPK-00#T0

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TO-3P

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Description:

DIODE GEN PURP 600V 20A

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Mfr	Renesas Electronics America Inc
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Obsolete
Diode Configuration	1 Pair Common Cathode
Supplier Device Package	TO-3P
Reverse Recovery Time (trr)	15 ns
Current - Reverse Leakage @ Vr	10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)	600 V
Operating Temperature - Junction	-55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 10 A
Current - Average Rectified (Io) (per Diode)	10A (DC)