Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GT20N135SRA,S1E

Toshiba Semiconductor and Storage

Product No:

GT20N135SRA,S1E

Manufacturer:

Package:

TO-247

Batch:

Datasheet:

Description:

D-IGBT TO-247 VCES=1350V IC=40A

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
IGBT Type	-
Input Type	Standard
Gate Charge	185 nC
Power - Max	312 W
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Test Condition	300V, 40A, 39Ohm, 15V
Switching Energy	-, 700µJ (off)
Td (on/off) @ 25°C	-
Operating Temperature	175°C (TJ)
Supplier Device Package	TO-247
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Voltage - Collector Emitter Breakdown (Max)	1350 V