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GT15J341,S4X

Toshiba Semiconductor and Storage

Product No:

GT15J341,S4X

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Package:

TO-220SIS

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Description:

PB-F DISCRETE IGBT TRANSISTOR TO

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
IGBT Type	-
Input Type	Standard
Power - Max	30 W
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Test Condition	300V, 15A, 33Ohm, 15V
Switching Energy	300µJ (on), 300µJ (off)
Td (on/off) @ 25°C	60ns/170ns
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-220SIS
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 15A
Reverse Recovery Time (trr)	80 ns
Current - Collector (Ic) (Max)	15 A
Current - Collector Pulsed (Icm)	60 A
Voltage - Collector Emitter Breakdown (Max)	600 V