Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

XPQ1R004PB,LXHQ

Toshiba Semiconductor and Storage

Product No:

XPQ1R004PB,LXHQ

Package:

L-TOGL™

Batch:

-

Datasheet:

-

Description:

40V U-MOS IX-H L-TOGL 1.0MOHM

Quantity:

Delivery:

Payment:

In Stock : 7

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.7455

    $2.7455

  • 10

    $2.28

    $22.8

  • 100

    $1.81488

    $181.488

  • 500

    $1.535675

    $767.8375

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

XPQ1R004PB,LXHQ - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101, U-MOSIX-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerBSFN
Product Status Active
Vgs(th) (Max) @ Id 3V @ 500µA
Base Product Number XPQ1R004
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 1mOhm @ 100A, 10V
Power Dissipation (Max) 230W (Tc)
Supplier Device Package L-TOGL™
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 6890 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)