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XPN9R614MC,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPN9R614MC,L1XHQ

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Package:

8-TSON Advance-WF (3.1x3.1)

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Description:

MOSFET P-CH 40V 40A 8TSON

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Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101, U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	+10V, -20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 500µA
Base Product Number	XPN9R614
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	9.6mOhm @ 20A, 10V
Power Dissipation (Max)	840mW (Ta), 100W (Tc)
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)