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XPN7R104NC,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPN7R104NC,L1XHQ

Package:

8-TSON Advance-WF (3.1x3.1)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 20A 8TSON

Quantity:

Delivery:

Payment:

In Stock : 9560

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.14

    $1.14

  • 10

    $0.9329

    $9.329

  • 100

    $0.72542

    $72.542

  • 500

    $0.61484

    $307.42

  • 1000

    $0.500859

    $500.859

  • 2000

    $0.471504

    $943.008

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XPN7R104NC,L1XHQ - Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSIII
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 200µA
Base Product Number XPN7R104
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 7.1mOhm @ 10A, 10V
Power Dissipation (Max) 840mW (Ta), 65W (Tc)
Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)