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WNSC5D04650T6J

WeEn Semiconductors

Product No:

WNSC5D04650T6J

Manufacturer:

WeEn Semiconductors

Package:

5-DFN (8x8)

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARBIDE 650V 4A 5DFN

Quantity:

Delivery:

Payment:

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WNSC5D04650T6J - Product Information

Parameter Info

User Guide

Mfr WeEn Semiconductors
Speed No Recovery Time > 500mA (Io)
Series -
Package Tape & Reel (TR)
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Product Status Active
Base Product Number WNSC5
Capacitance @ Vr, F 138pF @ 1V, 1MHz
Supplier Device Package 5-DFN (8x8)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 20 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A