Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
WNSC10650T6J
WeEn Semiconductors
Product No:
WNSC10650T6J
Manufacturer:
Package:
5-DFN (8x8)
Batch:
-
Datasheet:
Description:
DIODE SIL CARBIDE 650V 10A 5DFN
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
WNSC10650T6J - Product Information
Parameter Info
User Guide
| Mfr | WeEn Semiconductors |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad |
| Product Status | Obsolete |
| Base Product Number | WNSC1 |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Supplier Device Package | 5-DFN (8x8) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Information
Subscribe
Quick Links
