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VS-C12ET07T-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-C12ET07T-M3

Package:

TO-220AC

Batch:

-

Datasheet:

Description:

DIODE SIL CARB 650V 12A TO220AC

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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VS-C12ET07T-M3 - Product Information

Parameter Info

User Guide

Mfr Vishay General Semiconductor - Diodes Division
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Obsolete
Base Product Number C12ET07
Capacitance @ Vr, F 515pF @ 1V, 1MHz
Supplier Device Package TO-220AC
Current - Reverse Leakage @ Vr 65 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A