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UPA2825T1S-E2-AT

Renesas Electronics America Inc

Product No:

UPA2825T1S-E2-AT

Package:

8-HWSON (3.3x3.3)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 8HVSON

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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UPA2825T1S-E2-AT - Product Information

Parameter Info

User Guide

Mfr Renesas Electronics America Inc
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Product Status Obsolete
Vgs(th) (Max) @ Id -
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.6mOhm @ 24A, 10V
Power Dissipation (Max) 1.5W (Ta), 16.5W (Tc)
Supplier Device Package 8-HWSON (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)