Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TW140Z120C,S1F

Toshiba Semiconductor and Storage

Product No:

TW140Z120C,S1F

Manufacturer:

Package:

TO-247-4L(X)

Batch:

Datasheet:

Description:

G3 1200V SIC-MOSFET TO-247-4L 14

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+25V, -10V
Technology	SiC (Silicon Carbide Junction Transistor)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-4
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	191mOhm @ 10A, 18V
Power Dissipation (Max)	107W (Tc)
Supplier Device Package	TO-247-4L(X)
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 18 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	691 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)