Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TTA006B,Q

Toshiba Semiconductor and Storage

Product No:

TTA006B,Q

Manufacturer:

Package:

TO-126N

Batch:

Datasheet:

Description:

PB-F POWER TRANSISTOR TO-126N PC

Quantity:

Delivery:

Payment:

In Stock : 11

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tray
Power - Max	1.5 W
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Product Status	Active
Transistor Type	PNP
Operating Temperature	150°C (TJ)
Frequency - Transition	70MHz
Supplier Device Package	TO-126N
Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Current - Collector (Ic) (Max)	1 A
Current - Collector Cutoff (Max)	200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Voltage - Collector Emitter Breakdown (Max)	230 V