Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TSM6NB60CI C0G

Taiwan Semiconductor Corporation

Product No:

TSM6NB60CI C0G

Package:

ITO-220AB

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 6A ITO220AB

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

TSM6NB60CI C0G - Product Information

Parameter Info

User Guide

Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Product Status Obsolete
Vgs(th) (Max) @ Id 4.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.6Ohm @ 3A, 10V
Power Dissipation (Max) 40W (Tc)
Supplier Device Package ITO-220AB
Gate Charge (Qg) (Max) @ Vgs 18.3 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 872 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)