Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TSM6NB60CI C0G

Taiwan Semiconductor Corporation

Product No:

TSM6NB60CI C0G

Manufacturer:

Package:

ITO-220AB

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 6A ITO220AB

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	1.6Ohm @ 3A, 10V
Power Dissipation (Max)	40W (Tc)
Supplier Device Package	ITO-220AB
Gate Charge (Qg) (Max) @ Vgs	18.3 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	872 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)