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TSM60NB260CI

Taiwan Semiconductor Corporation

Product No:

TSM60NB260CI

Package:

ITO-220

Batch:

-

Datasheet:

Description:

600V, 13A, SINGLE N-CHANNEL POWE

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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TSM60NB260CI - Product Information

Parameter Info

User Guide

Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number TSM60
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 260mOhm @ 3.9A, 10V
Power Dissipation (Max) 32.1W (Tc)
Supplier Device Package ITO-220
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1273 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)