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TSM60NB1R4CH C5G

Taiwan Semiconductor Corporation

Product No:

TSM60NB1R4CH C5G

Package:

TO-251 (IPAK)

Batch:

-

Datasheet:

Description:

MOSFET N-CHANNEL 600V 3A TO251

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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TSM60NB1R4CH C5G - Product Information

Parameter Info

User Guide

Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Base Product Number TSM60
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.4Ohm @ 900mA, 10V
Power Dissipation (Max) 28.4W (Tc)
Supplier Device Package TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs 7.12 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 257.3 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)