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TSM60NB190CI C0G

Taiwan Semiconductor Corporation

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TSM60NB190CI C0G

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ITO-220AB

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Description:

MOSFET N-CH 600V 18A ITO220AB

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Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	TSM60
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	190mOhm @ 6A, 10V
Power Dissipation (Max)	33.8W (Tc)
Supplier Device Package	ITO-220AB
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	1273 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)