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TSM60N1R4CH C5G

Taiwan Semiconductor Corporation

Product No:

TSM60N1R4CH C5G

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Package:

TO-251 (IPAK)

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Description:

MOSFET N-CH 600V 3.3A TO251

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Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	TSM60
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	1.4Ohm @ 2A, 10V
Power Dissipation (Max)	38W (Tc)
Supplier Device Package	TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	370 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3.3A (Tc)