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TSM4NB65CI C0G

Taiwan Semiconductor Corporation

Product No:

TSM4NB65CI C0G

Package:

ITO-220AB

Batch:

-

Datasheet:

Description:

MOSFET N-CH 650V 4A ITO220AB

Quantity:

Delivery:

Payment:

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TSM4NB65CI C0G - Product Information

Parameter Info

User Guide

Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Base Product Number TSM4NB65
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.37Ohm @ 2A, 10V
Power Dissipation (Max) 70W (Tc)
Supplier Device Package ITO-220AB
Gate Charge (Qg) (Max) @ Vgs 13.46 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 549 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)