Home / FET, MOSFET Arrays / TSM250NB06LDCR RLG

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TSM250NB06LDCR RLG

Taiwan Semiconductor Corporation

Product No:

TSM250NB06LDCR RLG

Package:

8-PDFN (5x6)

Batch:

-

Datasheet:

Description:

DUAL N-CHANNEL POWER MOSFET 60V,

Quantity:

Delivery:

Payment:

In Stock : 4798

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.375

    $2.375

  • 10

    $1.97315

    $19.7315

  • 100

    $1.57016

    $157.016

  • 500

    $1.328594

    $664.297

  • 1000

    $1.127298

    $1127.298

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

TSM250NB06LDCR RLG - Product Information

Parameter Info

User Guide

Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 2W (Ta), 48W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number TSM250
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 25mOhm @ 6A, 10V
Supplier Device Package 8-PDFN (5x6)
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 30V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 29A (Tc)