Home / FET, MOSFET Arrays / TSM200N03DPQ33 RGG

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TSM200N03DPQ33 RGG

Taiwan Semiconductor Corporation

Product No:

TSM200N03DPQ33 RGG

Package:

8-PDFN (3x3)

Batch:

-

Datasheet:

Description:

MOSFET 2 N-CH 30V 20A 8PDFN

Quantity:

Delivery:

Payment:

In Stock : 14665

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.5485

    $1.5485

  • 10

    $1.2635

    $12.635

  • 100

    $0.98249

    $98.249

  • 500

    $0.83277

    $416.385

  • 1000

    $0.678386

    $678.386

  • 2000

    $0.638618

    $1277.236

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

TSM200N03DPQ33 RGG - Product Information

Parameter Info

User Guide

Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 20W
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number TSM200
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V
Supplier Device Package 8-PDFN (3x3)
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)