Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TSM120N06LCR RLG

Taiwan Semiconductor Corporation

Product No:

TSM120N06LCR RLG

Package:

8-PDFN (5x6)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 60V 54A 8PDFN

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

TSM120N06LCR RLG - Product Information

Parameter Info

User Guide

Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number TSM120
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
Power Dissipation (Max) 69W (Tc)
Supplier Device Package 8-PDFN (5x6)
Gate Charge (Qg) (Max) @ Vgs 36.5 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 2116 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 54A (Tc)