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TSM060NB06LCZ

Taiwan Semiconductor Corporation

Product No:

TSM060NB06LCZ

Package:

TO-220

Batch:

-

Datasheet:

Description:

60V, 111A, SINGLE N-CHANNEL POWE

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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TSM060NB06LCZ - Product Information

Parameter Info

User Guide

Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number TSM060
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 6mOhm @ 13A, 10V
Power Dissipation (Max) 2W (Ta), 156W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 6273 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 111A (Tc)