Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TRS3E65H,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS3E65H,S1Q

Manufacturer:

Package:

TO-220-2L

Batch:

Datasheet:

Description:

G3 SIC-SBD 650V 3A TO-220-2L

Quantity:

Delivery:

Payment:

In Stock : 400

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Toshiba Semiconductor and Storage
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-220-2
Product Status	Active
Capacitance @ Vr, F	199pF @ 1V, 1MHz
Supplier Device Package	TO-220-2L
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	45 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	3A
Operating Temperature - Junction	175°C
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 3 A